PLD
Pulsed Laser Deposition
Modern Pulsed Laser Deposition (PLD) system containing all state-of-the-art equipment for high-quality thin film deposition: high-pressure & high-voltage RHEED, laser substrate heating and in-situ laser energy control. The PLD allows the synthesis of materials and heterosystems for oxide electronics. An UHV tunnel allows in-vacuum sample transfer between the PLD system and the adjacent ADOMBE system and Ion-Beam-Etching system.
Device Specifications
| Load-lock for substrates and targets | |
| Number of PLD targets | 6 |
| Substrate size | up to 10x10 mm² |
| Temperature range | 25-1500 °C |
| Process gases | Ar2, O2, N2 |
| Laser | KrF excimer laser at 248 nm, 750 mJ |
