Overview

While this is possible to large extent in semiconductor technology, it is currently prohibited for electroceramic oxides by the lack of a generalized understanding of how chemical substitution (doping) is affecting material properties.

The Collaborative Research Center FLAIR proposes to overcome this deficiency by using the Fermi energy as a common parameter to describe the different possible charge compensation mechanisms, which are decisive for material properties. In doing so, FLAIR explores Fermi level engineering as a new avenue towards the design of oxide electroceramics and also provides an advanced understanding of space-charge regions at surfaces, grain boundaries, heterointerfaces. The relation between the Fermi energy and phase stability is applied further to derive novel synthesis routes and to control microstructure evolution. Eventually, Fermi level engineering shall become a toolkit for designing a variety of oxide electro-ceramic materials for different applications.