This year’s Non-Volatile Memory Technology Symposium (NVMTS) took place end of October in the beautiful city of Durham, North Carolina.

The NVMTS is a major forum for researchers and practitioners in industry and academia to discuss the state of the art in NVM and gear up for future challenges in emerging memory technologies.

Lambert Alff from ATFT gave in invited talk about oxygen and grain boundary engineered HfO_x based resistive memory. Non-volatile memory is considered to play a major role in achieving energy-efficient computation in the future digital world.