In the MBE-chamber, thin films can be produced with Molecular-Beam-Epitaxy and analysed insitu by Reflection of High Energy Electron Diffraction (RHEED). Furthermore, it is possible to heat the sample by an electron beam up to 1200 °C. The Base pressure of 5 x 10-11 torr is produceed by Ion-Getter-Pumps and one Titanium-Sublimation-Pump. Samples can be transfered through an intro chamber without breaking the vacuum of the main chamber. If needed, the samples can also be transfered into a mini-UHV-chamber, in which they can be analysed by x-ray diffraction at different temperatures.
RF Magnetron Sputter System for epitaxial deposition of thin films
Materials: oxides, metals
Max. power: 150 W
Substrate temperature: 20 – 650°C
Base pressure: 8 x 10-9 torr
Working pressure: 1 – 50 mTorr (Ar, Ar/O2, …)
The deposited films can be characterized by LEED (Low-Energy Electron Diffraction) and AES (Auger electron spectroscopy) in the analysis chamber. The transfer takes place in vacuo.
OMICROM variable temperature STM
Temperature up to 3500 °C
Sample mass up to 20 g
3D printer for Crystallgraphic Models
