The system is equipped with 3 chambers with 4 cathodes for magnetron sputtering, one chamber for co-sputtering, a chamber for thermal evaporation and chemical vapor deposition and a chamber for atomic layer deposition. Our maximum substrate size is 2x2 cm2.
We can prepare thin films with thicknesses from below 1 nm up to about 2 µm. Magnetron sputtering with 2” cathodes, rf, dc and pulsed dc excitation, variable target to substrate distance and variable gas composition and pressure is available. Substrates can be heated using halogen lamps up to 700 °C during deposition. We have extensive experience in metal oxide deposition.
Materials deposited include:
- metals: Pt, Ru, Al, Cu, Ag, Au, Sn
- n-type conductors: ZnO(:Al), SnO2(:Ta,Sb,Nb) and In2O3(:Sn,Ge,Mo,Ti,Zr,H)
- p-type conductors: Cu2O, CuO, NiO
- dielectric oxides: SrTiO3, BaTiO3(:Nb,Mn) and (Ba,Sr)TiO3(:Fe)
- ionic conductors: CeO2(:Gd,Nb), (La,Sr)MnO3, (La,Sr)FeO3
- other binary oxides: Fe2O3, Co3O4, Bi2 O3, ZrO2, TiO2
- nitrides and oxynitrides: TiN, Sn2N2O
We use commercial and home-made effusion cells for thermal evaporation of different metals and compounds.
Materials deposited include:
- metals: Cu, Ag, Au
- organic molecules
- chalcogenides: CdS, CdTe, ZnSe, ZnS, …
The chamber has also been used for Chemical Vapor Deposition of TiO2 using single source precursors. Our system also includes a custom low-pressure Atomic Layer Deposition chamber, which we use for the preparation of Al2O3 films from TMA and H2O.
