We are excited to share that our team just returned from the ICNCE 2024 in Aachen! It was an incredible experience filled with insightful presentations, inspiring discussions, and innovative ideas. We had a lot of fun networking with fellow professionals and exploring the latest advancements in our field. We're eager to implement the great ideas we gathered and continue pushing the boundaries of our work. We hope to meet everyone again at future events and continue these valuable exchanges. Thanks to everyone who made this event so memorable!

Our contribution to the conference:

• Enrique Miranda et al.
  Power dissipation and energy consumption in memristive devices
• Li-Chung Shih et al.
  Programmable photoresponsivity in Zinc-Tin Oxide phototransistor for in sensor vector matrix multiplication
• Jonas Gehrunger et al.
  High speed measurements on memristive devices
• Yingxin Li et al.
  Electronic noise in Yttrium oxide based memristors
• Eszter Piros et al.
  Yttrium oxide based memristors: An alternative material for stable analog switching and quantized conductance
• Taewook Kim et al.
  Influence of hafnium oxide layer thickness on the performance of Cu/HfO₂/Pt CBRAM device
• Philipp Schreyer et al.
  Simplified all HfO_x resistive switches with artificial virtual electrode and self-limited oxide layer