In the top 10%
2020/05/08
Our paper is among the top 10% most downloaded papers within the first 12 month after online publication in the last two years in Advanced Electronic Materials. Wow!
Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Stefan Petzold; Alexander Zintler; Robert Eilhardt; Nico Kaiser; Eszter Piros; Sankaramangalam Ulhas Sharath; Tobias Vogel; Márton Major; Keith Patrick McKenna; Leopoldo Molina-Luna; Lambert Alff
Adv. Electron. Mater. 5, 1900484 (2019)
