Oxide MBE
The worldwide latest generation of MBE for complex materials
Molecular beam epitaxy (MBE) is a thin film method with ultimate atomic precision developed in semiconductor technology. We are developing new MBE systems to significantly expand the range of materials. Our oxide MBE (ADOMBE) allows the atomic layer deposition of thin films and layer systems with highest control. The vacuum connection with a system for pulsed laser deposition (PLD) and an ion beam etching system is unique worldwide. In addition to their highly topical technical expertise, our graduates always have the valuable competence to develop modern thin-film systems.
Pulsed Laser deposition (PLD)
Material synthesis of complex oxides and their heterostructures using high power laser pulses
Our three systems for pulsed laser deposition have been developed in-house and define the state of the art. We specialize in oxide heterostructures made of novel materials to produce model components for microelectronics or energy conversion. PLD is particularly well suited for the stoichiometric transfer of complex material compositions to the thin layers. Already during the growth of the layers, we use high-energy electrons to observe the crystal quality of the surfaces and monitor the growth mode.