DAISY-FUN in Detail
- Electrochemistry cell: Electrochemical preparation and investigation can be performed under inert gas atmosphere; the samples can then be transferred to the UHV-chambers without having contact to the atmosphere.
- Thin film batteries
- Organic Photovoltaics: Organic molecules are deposited by physical vapor deposition (PVD) onto substrates to prepare thin film photovoltaic cells
- Molecular beam epitaxy chamber consisting of four RF- and DC-sputter sources for the growth of thin films from pure or mixed semiconductors, metals and oxides by standard or reactive sputtering and two electron beam evaporators for physical vapor deposition (PVD) of refractory metals, e.g. Pt or other pure materials and a quartz micro-balance for film thickness measurements. The substrate temperature can be varied between -180 °C up to 500 °C during deposition.
- Atomic layer deposition (ALD) chamber for TiO2 deposition.
- Oxygen plasma source
Additional surface preparation (not connected to the central chamber):
- Sputter deposition chamber for high vapor pressure materials e.g. Teflon for the preparation of hydrophilic or hydrophobic coatings by magnetron sputtering
- Plasma Enhanced Chemical Vapor Deposition (PECVD) for the preparation of amorphous or polycrystalline SiC semiconductor films
- X-Ray and Ultraviolet Photoelectron Spectroscopy (XPS, UPS)
- Inverse Photoemission Spectroscopy (IPES)
- Low Energy Electron diffraction (LEED)
- Argon ion gun for cleaning and heating station for subsequent annealing of samples
- High Resolution Electron Energy Loss Spectroscopy (HREELS)