With the growing demand for sustainable energy solutions, thermoelectric devices that convert heat directly into electricity have gained significant interest. While conventional thermoelectric devices based on the Seebeck effect are well established, their complex designs and geometric limitations have hindered large scale adoption. Anomalous Nernst Effect (ANE) based devices have recently emerged as a promising alternative, offering simpler geometries and device flexibility.

In this interdisciplinary collaborative work between TU Darmstadt, RWTH Aachen, FZU – Institute of Physics and Charles University, Czech Republic, we focused on addressing these challenges by exploring iron nitride Fe4N due to its cost-effectiveness, nontoxicity, and tunability through elemental doping.

R. K. Paul, J. Vít, P. Levinský, J. Hejtmánek, O. Kaman, M. Pashchenko, L. Kubíčková, K.-H. Ahn, M. Jarošová, J. More Chevalier, S. Cichoň, T. Kmječ, J. Kohout, M. Hans, S. Mráz, J. M. Schneider, E. Adabifiroozjaei, L. Molina-Luna, O. Gutfleisch, I. Dirba, K. Knížek
Two-Component Anomalous Hall and Nernst Effects in Anisotropic Fe4–xGexN Thin Films
ACS Omega 11, 5 (2026).
DOI: 10.1021/acsomega.5c12420