Our work on utilizing oxygen engineering to control the resistive switching dynamics in yttria-based RRAM, recently published in Advanced Electronic Materials, has been selected to be featured on the cover of the journal. We show that via reducing the oxygen content of the yttria layer the abrupt switching characteristics are transformed to gradual, almost analog transition. Exploiting the gradual nature of the switching, the basic building blocks of neural networks, namely synapses, can be mimicked. Enhancing the complexity of these by increasing their inter-connectivity, neural networks, and finally, the human brain can be mimicked.
S. Petzold, E. Piros, R. Eilhardt, A. Zintler, T. Vogel, N. Kaiser, A. Radetinac, P. Komissinskiy, E. Jalaguier, E. Nolot, C. Charpin‐Nicolle, C. Wenger, L. Molina‐Luna, E. Miranda, L. Alff
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
Adv. Electron. Mater., Early View, 2000439 (2020)
doi: 10.1002/aelm.202000439 (Paper)
doi: 10.1002/aelm.202070044 (Cover)