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2019/10/10

Back Cover in Advanced Electronic Materials

Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Our recent paper on a new type of grain boundary engineering in electronic devices was chosen as a back cover in the renowned journal on Advanced Electronic Materials. Our method results in forming free devices with a narrow distribution of forming voltages which makes it a powerful tool to overcome one of the main challenges for resistive switching devices which is device-to-device variation.

S. Petzold, A. Zintler, R. Eilhardt, E. Piros, N. Kaiser, S. U. Sharath, T. Vogel, M. Major, K. P. McKenna, L. Molina‐Luna, L. Alff
Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Adv. Electron. Mater., 5, 1900484 (2019)
doi: 10.1002/aelm.201970054 (back cover)
doi: 10.1002/aelm.201900484 (paper)

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