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In the top 10%

Our paper is among the top 10% most downloaded papers within the first 12 month after online publication in the last two years in Advanced Electronic Materials. Wow!

Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold; Alexander Zintler; Robert Eilhardt; Nico Kaiser; Eszter Piros; Sankaramangalam Ulhas Sharath; Tobias Vogel; Márton Major; Keith Patrick McKenna; Leopoldo Molina-Luna; Lambert Alff

Adv. Electron. Mater. 5, 1900484 (2019)

doi: 10.1002/aelm.201900484