UV/Vis/NIR – spectrometer
Determination of absorption, transmission, reflection and diffuse reflection (λ = 180-3300nm).
Fluorescence-Spectrometer with optical and x-ray excitation
Measurement of excitation (λ =200-850nm) and emission spectra (λ = 200-800nm) of x-ray excited samples in the temperature range from 10K-300K.
Vacuum deposition system
for metals, dielectrics and organic materials. Co-evaporation of two materials from different sources. Deposition of almost any desired layer sequence. s the deposition of almost any desired layer sequence.
Measurement of the differential capacity in the range of -40 V to +40 V, for frequencies from 1 mHz to 32 MHz.
Parameter analyser with cryostat for semiconductors
Parameter analysis of diodes and transistors in the temperature range of 4-400 K.
Determination of layer thickness in the range of ~100 Å to 10000 Å.
Scanning electron microscope with integrated cathodoluminescence unit
with a resolution down to the sub micrometer range.
Determination of thin films (1-1000 nm) and non-destructive determination of optical properties (refraction index and absorption)
Determination of topography and surface potential of thin films with a resolution in the nm-regime under ultra high vacuum (UHV) and deep temperature conditions.
Laser for spectroscopy and time-of-flight measurements
Measurement of spectral- and time-resolved decay characteristics of optical emitting transitions; Time-of-flight measurements for determining the charge carrier mobility.
Short-time poling set up
Determination of field dependent polarization switching times of different ferroelectric materials. Operating parameters: poling times from 1µs to 1000s, amplitudes up to 3000V.
Corona poling set up
Poling of dielectrics by a corona discharge process with in situ monitoring of charging current and surface potential temporal dependencies.